本课题重点研究高纯稀有金属杂质元素走向及作用规律、大规格稀有金属制品烧 结和形变过程中的组织演化规律及精确调控、超高纯钨及钨合金靶材晶粒非均匀 长大机理及晶粒尺寸控制问题，攻克制备过程中杂质元素控制、大尺寸稀有金属 制品高温烧结致密化、形变与晶粒均匀性控制、高精度形变加工及精密制备大关 键技术，并解决相关产品工业化生产所面临的科学和技术问题。建立高纯钨及钨 合金靶材、多元 Si 合金靶材的压制成形、高温高压烧结、大变形量塑形加工、热 处理、高精度机械加工技术及其显微组织、形状尺寸调控方法与装备；建立大尺 寸超高纯硅单晶生长、精密成形、热处理及化学处理制备技术；开发出半导体用超高纯钨靶材、微电子用超高纯钨合金靶材、硅单晶环和硅电极产品。拟解决：1、 高纯钨及钨合金靶材制备过程中杂质元素控制；2、制备过程中二次污染控制；3、 高纯钨及钨合金、多元硅合金靶坯高温烧结致密化；4、高纯钨及钨合金、多元硅 合金靶材形变与晶粒均匀性控制；5、高纯钨及钨合金靶材、大尺寸硅单晶制品和 多元硅合金靶材高精度形变加工及精密制备；6、大尺寸硅单晶生长过程固液界面 稳定性、热应力和典型杂质及缺陷控制技术，多元硅合金脆性靶材与背板的高可 靠性复合。

This topic focuses on the study of the trend and action law of high-purity rare metal impurity elements, the microstructure evolution law and precise control during the sintering and deformation of large-scale rare metal products, and the mechanism of non-uniform growth of ultra-high-purity tungsten and tungsten alloy target grains. Grain size control issues, overcome the impurity element control during the preparation process, high-temperature sintering and densification of large-size rare metal products, deformation and grain uniformity control, high-precision deformation processing and precision preparation key technologies, and solve the industrial production of related products The scientific and technical problems faced. Establish high-purity tungsten and tungsten alloy target materials, multi-element Si alloy target materials, press forming, high temperature and high pressure sintering, large deformation processing, heat treatment, high-precision machining technology and its microstructure, shape and size control methods and equipment; Established large-size ultra-high-purity silicon single crystal growth, precision forming, heat treatment and chemical treatment preparation technology; developed ultra-high-purity tungsten targets for semiconductors, ultra-high-purity tungsten alloy targets for microelectronics, silicon single crystal rings and silicon electrodes product. To be solved: 1. Control of impurity elements during the preparation of high-purity tungsten and tungsten alloy targets; 2. Control of secondary pollution during the preparation; 3. High-temperature sintering and densification of high-purity tungsten and tungsten alloys and multiple silicon alloy target blanks; 4. , High-purity tungsten and tungsten alloy, multi-element silicon alloy target material deformation and grain uniformity control; 5. High-purity tungsten and tungsten alloy target material, large-size silicon single crystal products and multi-element silicon alloy target material high-precision deformation processing and precision Preparation; 6. Solid-liquid interface stability, thermal stress and typical impurity and defect control technology during the growth of large-size silicon single crystals, and the high-reliability composite of multi-element silicon alloy brittle targets and backplanes.