The third generation semiconductor can be widely used in a number of strategic emerging industries to promote and support the transformation of the next generation industry. It is expected that by 2020, only the semiconductor lighting field can form a trillion market scale. However, due to the large light attenuation of the existing luminescent materials under the high-density energy excitation of the third generation semiconductor, and the lack of high-efficiency Blue / green luminescent materials suitable for high-energy near ultraviolet violet light excitation, there is an urgent need to develop a new generation and high-performance luminescent materials for the third generation semiconductor. Therefore, through the research methods of theoretical design, experimental verification and application evaluation, this subject uses superalloy nitriding method and plasma discharge sintering method to prepare yellow luminescent materials resistant to high-density energy excitation, breaks through the new fluorescent materials and preparation technology for bulk high-density energy light sources for the third generation semiconductors, and develops at least three new phosphors for high-energy near ultraviolet violet LEDs, Provide core luminescent materials for the third generation semiconductor industry; Master the design theory and methods of new light-emitting materials for third-generation semiconductor packaging, form a complete intellectual property system, and promote the development and growth of China's third-generation semiconductor industry.
