对于U₃Si₂材料，主要考虑空位扩散机制和位错攀移辅助滑移机制下的蠕变，忽略位错湮灭机制下的蠕变。在高应力区主要是位错攀移辅助滑移机制主导，在低应力区主要是空位扩散机制主导。在应力逐渐增大的过程中，主导的蠕变机制逐渐从空位扩散机制转化到位错攀移辅助滑移机制，两种介观蠕变机制主导的区域没有明显交界线，过渡区范围较大，在大部分的应力范围下是两种机制均有显著贡献。裂变率对主导机制几乎没有影响。

For U₃Si₂ materials, the creep under vacancy diffusion and dislocation-assisted slip mechanism is considered, while the creep under dislocation annihilation mechanism is neglected. In the high stress region, the dislocation climbing-assisted slip mechanism is dominant, and in the low stress region, the vacancy diffusion mechanism is dominant. In the process of increasing stress, the dominant creep mechanism is gradually transformed from vacancy diffusion mechanism to dislocation climbing-assisted slip mechanism, and there is no obvious boundary between the two mesoscopic creep mechanisms, the range of transition zone is large, and in most of the stress range, the two mechanisms have significant contribution. The fission rate has little effect on the dominant mechanism.