超高纯二茂钴（纯度大于7N）中杂质如有机硅化合物、烃类化合物等，其含量约为几个ppm级，甚至是ppb级，这种ppb级含量的杂质难以用常规分析仪器检测，使用ICP-MS进行无机杂质的检测，方法简单，对不同元素的测定.具有检出限极低ppb级、重现性好，一次分析多种元素等显著特点。二茂钴样品处理过程：先氧化，再用酸溶解成水溶液，稀释后进行测试，使用ICP-MS仪器进行分析，测量方法参照《电子化学品 电感耦合等离子体质谱法通则》来确保检测纯度的可靠性。针对二茂钴下游产品处延片及最终的光电器件或高频器件质量产生影响，从而确定了需检测的杂质。最终依据这五种（硅、铜、镁、锌和铁）有害元素含量（相对于基体钴的重量百分比的总量），差量法来判定出二茂钴的纯度。

Ultra high purity cobalt dicene (purity > 7N) impurities such as organic silicon compounds, hydrocarbon compounds, the content of about several ppm level, or even ppb level, this ppb level of impurities is difficult to detect with conventional analytical instruments. , using ICP-MS for the detection of inorganic impurities, the method is simple, the determination of different elements. The detection limit is very low PPB, reproducibility is good, and multiple elements are analyzed at one time. Treatment process of cobalt dicene sample: oxidized first, then dissolved into aqueous solution with acid, tested after dilution, analyzed by ICP-MS instrument, and the measurement method was in accordance with "General Principles of Electronic Chemical Inductively coupled Plasma mass Spectrometry" to ensure the reliability of purity detection. The impurities to be detected were determined in view of the influence on the quality of the wafer and the final photoelectric device or high-frequency device of the downstream products of cobalt dicene. Finally, the purity of cobalt dicene was determined by the difference method according to the content of the five harmful elements (silicon, copper, magnesium, zinc and iron) (the total weight percentage of cobalt in the matrix).