在本研究中，将水磨抛光后的试样，在10 ml HClO4 + 90 ml C2H5OH混合溶液中进行电解抛光，电压与时间分别为10~20 V和10~15 s。使用配备有Oxford Nordlys F+型EBSD附件的FEI Quanta 650热场发射电子显微镜进行晶体学数据采集，并获取界面取向差分布等，扫描面积为80×100 μm，扫描步长为0.1~0.2 μm。发现小角度界面密度发生降低。

In this study, the samples after grinding and polishing were electrochemically polished in 10 ml HClO4 + 90 ml C2H5OH mixed solution. The voltage and time were 10-20 V and 10-15 s, respectively. The FEI Quanta 650 thermal field emission electron microscope equipped with Oxford Nordlys F + EBSD accessories was used to collect the crystallographic data, and the interface orientation difference distribution was obtained. The scanning area was 80 × 100 μm, and the scanning step length was 0.1 ~ 0.2 μm. It is found that the interface density at small angles decreases.