多晶硅放在单晶炉的石英坩埚内，通过加热使硅料全部熔化，然后经过引晶、放肩、等径提拉、收尾和冷却等过程，最后形成单晶圆棒，经过滚磨截断成单晶圆柱体，通过线切割机切成厚度为10mm圆片状硅单晶片，用清洗机进行清洗干燥后，使用低温傅里叶变换红外光谱法测量硅单晶III、V族杂质含量，从而得出硅单晶的纯度。

The polycrystalline silicon is placed in the quartz crucible of the single crystal furnace, all the silicon materials are melted by heating, and then the single crystal round rod is formed through the processes of crystal introduction, shoulder placement, equal diameter lifting, ending and cooling. It is cut into a single crystal cylinder through rolling grinding, and the round silicon single crystal wafer with a thickness of 10mm is cut by a wire cutting machine. After cleaning and drying with a cleaning machine, The purity of silicon single crystal is obtained by measuring the content of group III and V impurities in silicon single crystal by low temperature Fourier transform infrared spectroscopy.