厦门虹鹭提供的W-10wt%Ti靶材样品进行磁控溅射镀膜试验。靶材尺寸φ100*6mm，靶材密度99.33%，纯度4N7，进行了不同工艺对比。高沉积速率工艺条件下，功率密度30W/cm²，Ar气压15mTorr，靶基距8cm，沉积速率400nm/min，薄膜相对疏松，薄膜电阻率63±1μΩ.cm。低沉积速率工艺条件下，功率密度25W/cm²，Ar气压10mTorr，靶基距8cm，沉积速率350nm/min，薄膜相对致密，薄膜电阻率60±1μΩ.cm。

The w-10wt %Ti target sample provided by Xiamen Egret was tested by magnetron sputtering coating. The target size φ100*6mm, target density 99.33%, purity 4N7, different process comparison. Under the conditions of high deposition rate, the power density is 30W/cm2, Ar pressure is 15mTorr, the target distance is 8cm, the deposition rate is 400nm/min, and the film resistivity is 63±1μ ω.cm. Under the conditions of low deposition rate, the power density is 25W/cm2, the Ar pressure is 10mTorr, the target distance is 8cm, the deposition rate is 350nm/min, and the film resistivity is 60±1μ ω.cm.