本发明公开了一种硅电极加工的工艺方法。该工艺方法包括以下步骤：(1)将从加工中心加工好的硅电极进行超声清洗、烘干，然后将硅电极放在双面抛光机的游轮片上进行第一次抛光；(2)将抛光完的硅电极进行超声清洗、烘干，然后用夹具装硅电极放入盛有混酸的腐蚀槽进行腐蚀，混酸的配比为：氢氟酸45％ 65％∶硝酸45％ 65％∶冰醋酸98％＝50％ 70％∶10％ 30％∶10％ 20％；(3)将腐蚀完的硅电极超声清洗、烘干，然后将硅电极放在双面抛光机的游轮片上进行第二次抛光；(4)将抛光完的硅电极进行超声清洗、HF酸洗、烘干。采用本发明的工艺方法可以制造导气孔直径一致性很高的硅电极，该硅电极的离子注入精度很好。

The invention discloses a process method for processing silicon electrodes. The process method includes the following steps: (1) ultrasonic cleaning and drying of the silicon electrode processed from the machining center, and then placing the silicon electrode on the cruise wheel of a double-sided polishing machine for the first polishing; (2) polishing The finished silicon electrode is ultrasonically cleaned and dried, and then the silicon electrode is installed with a jig and placed in the corrosion tank containing mixed acid for corrosion. The ratio of the mixed acid is: hydrofluoric acid 45% 65%: nitric acid 45% 65%: glacial acetic acid 98% = 50% 70%: 10% 30%: 10% 20%; (3) Ultrasonic cleaning and drying the etched silicon electrode, and then place the silicon electrode on the cruise ship of the double-sided polishing machine for the second time Polishing; (4) Ultrasonic cleaning, HF pickling and drying of the polished silicon electrode. By adopting the process method of the present invention, a silicon electrode with high uniformity of the diameter of the air guide hole can be manufactured, and the ion implantation precision of the silicon electrode is very good.