本发明提供一种高致密超细晶大尺寸钼靶材的制备方法，通过冷等静压压型-烧结-热等静压压型-热轧制-退火-机加工的工艺流程来制备钼靶材，钼靶材先通过热等静压处理后，对钼靶材坯料进行了第一次致密化处理，然后将该坯料进行热轧处理，对钼靶材坯料进行了第二次致密化处理，最后经过950~1100℃，保温60-90min的退火处理及机械加工等工序获得所需性能的钼靶材。本发明的制备方法能够制作出高纯度(纯度达到99.9％以上))、全致密(密度达到99.9％以上)、超细晶(晶粒度小于20μm)的钼靶材，可满足要求越来越高的溅射工艺，提高薄膜溅射速度，改善钼金属溅射薄膜的质量，提高薄膜性能。

The invention provides a method for preparing a high-density, ultra-fine-crystalline, large-size molybdenum target material, which is prepared through a process flow of cold isostatic pressing-sintering-hot isostatic pressing-hot rolling-annealing-machining The target material, the molybdenum target material is processed by hot isostatic pressing, the molybdenum target blank is densified for the first time, and then the blank is hot rolled, and the molybdenum target blank is densified for the second time After treatment, the molybdenum target material with the required performance can be obtained by annealing treatment and mechanical processing at 950~1100℃, heat preservation for 60-90min. The preparation method of the present invention can produce molybdenum target materials with high purity (purity of more than 99.9%), full density (density of more than 99.9%), and ultra-fine crystals (grain size less than 20μm), which can meet more and more requirements. High sputtering process, increase film sputtering speed, improve the quality of molybdenum metal sputtered film, and improve film performance.