本发明采用的高功率脉冲磁控溅射技术（HiPIMS）其峰值电流密度是传统磁控溅射技术的两个数量级以上；依靠此瞬时高能量密度所制备的涂层具有很多传统磁控溅射技术或者电弧离子镀技术不具备的优点，比如优良的膜基结合力、致密的涂层结构和光滑的涂层表面，具有较低的内应力。同时加入碳靶和硅靶同时进行ta-C涂层的制备。

The peak current density of the high-power pulse magnetron sputtering technology (HiPIMS) used in this invention is more than two orders of magnitude higher than that of traditional magnetron sputtering technology; The coatings prepared by relying on this instantaneous high energy density have many advantages that traditional magnetron sputtering or arc ion plating techniques do not have, such as excellent film-based bonding, dense coating structure, and smooth coating surface, with lower internal stress. Simultaneously adding carbon targets and silicon targets for the preparation of ta-C coatings.