本发明公开了一种铜镍硅合金带材及其制备方法，该带材的重量百分组成为：Ni 0 .8‑ 1 .8%，Si 0.15‑0 .35%，Zr 0 .003‑0.08%，P 0 .01‑ 0 .07%，其余为Cu及不可避免的杂质，且Ni和Si的 重量含量满足4≤Ni/Si≤6 .2；所述铜镍硅合金 带材中析出相均为δ‑Ni2 Si析出相且均匀分布， δ‑Ni2 Si析出相中粒径为20‑30nm的析出相粒子 占比30‑40%，粒径为30‑40nm的析出相粒子占比 30‑40%，粒径大于40nm的析出相粒子占比20‑ 40%。本发明的铜镍硅合金带材不仅具有良好导 电性，且具备较高强度以及良好的折弯性能。 

The present invention discloses a copper-nickel-silicon alloy strip and a preparation method thereof, the weight of the strip is grouped into: Ni 0.8-1.8%, Si 0.15-0 .35%, Zr 0 .003-0.08%, P 0 .01-0.07%, the rest are Cu and unavoidable impurities, and the weight content of Ni and Si meets 4≤Ni/Si≤6 .2; the precipitated phase in the copper-nickel-silicon alloy strip is δ-Ni2Si precipitated phase and evenly distributed, and the precipitated phase particles with a particle size of 20-30nm in the δ-Ni2Si precipitated phase account for 30-40%, The proportion of precipitated phase particles with a particle size of 30-40 nm 30-40%, precipitated phase particles with a particle size greater than 40nm account for 20-40%. The copper-nickel-silicon alloy strip of the present invention not only has good electrical conductivity, but also has high strength and good bending performance.