Microstructure in Ti80 alloy annealed at different temperatures, as shown by OM (a to d) and SEM (e to h) images. Microstructure after annealing at (a) and (e) 850
◦C, (b) and (f) 900 ◦C, (c) and (g) 950 ◦C, and (d) and (h) 1000 ◦C. (i) The mean thickness d of phase, i.e., the average value of intersecting diagonals (ASTM E112-12), varies with annealing temperature. (j) Typical HAADF image and STEM elemental maps of Ti80 alloy annealed at 1000 ◦C.
Microstructure in Ti80 alloy annealed at different temperatures, as shown by OM (a to d) and SEM (e to h) images. Microstructure after annealing at (a) and (e) 850
◦C, (b) and (f) 900 ◦C, (c) and (g) 950 ◦C, and (d) and (h) 1000 ◦C. (i) The mean thickness d of phase, i.e., the average value of intersecting diagonals (ASTM E112-12), varies with annealing temperature. (j) Typical HAADF image and STEM elemental maps of Ti80 alloy annealed at 1000 ◦C.