本发明公开了一种掺杂亚微米金刚石碳化钨溅射靶材及其制备方法，其相对密度为95.3-98.6%，平均品粒尺寸为11-45um，原料由纯度>3N5的碳化钨粉、纯度>3N的钨粉、纯度>3N的石墨粉和金刚石粉组成且钨粉的含量为05-5wt%，石墨粉的含量为0.1-1wt%，金刚石粉的含量为01-07wt%，余量为碳化钨粉，该碳化钨粉的粒径为0.2-0.6um，该钨粉的粒径为002-01um，该石器粉的粒径为2-4um，该金刚石粉的粒度为W0-W0.25。本发明通过控制原料粉末掺杂与配比、球磨混粉以及热压烧结工艺，从而制备出尺寸较大、晶粒较细、致密度较高、无Co的碳化钨溅射靶材。

The invention discloses a doped submicron diamond tungsten carbide sputtering target and a preparation method thereof. The relative density is 95.3-98.6%, the average grain size is 11-45um, and the raw material is made of tungsten carbide powder with a purity of >3N5, It is composed of tungsten powder with purity>3N, graphite powder with purity>3N and diamond powder, and the content of tungsten powder is 05-5wt%, the content of graphite powder is 0.1-1wt%, and the content of diamond powder is 01-07wt%, the balance For tungsten carbide powder, the particle size of the tungsten carbide powder is 0.2-0.6um, the particle size of the tungsten powder is 002-01um, the particle size of the stoneware powder is 2-4um, and the particle size of the diamond powder is W0-W0. 25. The invention prepares the tungsten carbide sputtering target material with larger size, finer crystal grain, higher density and no Co by controlling the doping and proportioning of raw material powder, ball milling powder mixing and hot pressing sintering process.