项目以微电子、半导体照明等产业用高端装备所需的大尺寸高纯钨、钼、铼等稀有金属制品为主要研究对象，重点研究了高纯稀有金属杂质元素走向及作用规律、大规格稀有金属制品烧结和形变过程中的组织演化规律及精确调控、超高纯钨及钨合金靶材晶粒非均匀长大机理及晶粒尺寸控制、制备过程中杂质元素控制等关键科学和技术问题。揭示了杂质元素的来源、存在形式、走向规律，建立了粉体纯净化、烧结过程二次纯化等系列高纯化制备工艺，显著提高了钨/钨合金靶材和铼板的纯度；阐明了烧结过程分阶段调控原理，开发了无压分步烧结新工艺，高纯钨、钼晶粒细化及均匀性明显提升；揭示了杂质元素对形变和再结晶行为的作用机制、大尺寸板材组织不均匀性形成机理，解决了大尺寸板材组织均匀性、板型控制等难题。制备出了外径Φ1010×1210mm、密度18.7g/cm3 的钨管，并成功应用于半导体高纯石英玻璃、蓝宝石单晶制造等高技术领域；制备出了纯度6N 和尺寸为0.2×605×720mm的大尺寸纯铼制品，突破了半导体高端装备（MOCVD）核心部件的国外垄断，已成为国内外一流厂商的核心供应商。两类产品解决了国家重大工程和高端装备的核心零部件受制于国外的难题。建成了800 吨/年的钨制品和1200 吨/年的钼板生产示范线。开发出总纯度6N2、相对密度99.74%、平均晶粒14.5μm的超高纯钨靶材；开发出总纯度5N3、相对密度99.66%、平均晶粒8.84μm的超高纯钨合金靶材；开发出总纯度11N5、最大直径φ387mm 的硅单晶制品；开发出总纯度4N2、最大直径φ440mm 的多元硅合金靶材。

The research project focused on large-scale high-purity rare metal products required by high-end equipment. Several key scientific and technical issues were investigated: the dynamics and interacting mechanisms of impurity elements in high-purity rare metals, microstructural evolution and precise control during sintering and deformation process, and the non-uniform grain growth mechanism and impurity control of ultra- high-purity tungsten and tungsten alloy targets. The origin, existing form and dynamics of impurity elements were revealed; High purification techniques such as powder purification and secondary purification in sintering process were established, which significantly improved the purity of tungsten / tungsten alloy target and rhenium products; The mechanisms of phased regulation of sintering process is clarified, and a new pressureless multi-step sintering method is developed, which significantly enhanced the grain refinement and uniformity of high-purity tungsten and molybdenum; The effects of impurity elements on plastic deformation and recrystallization behavior and the origin of microstructural heterogeneity of large-scale plate were revealed, and the problems of microstructural uniformity and shape control of large-scale plate are solved. Large-scale tungsten tube with outer diameter of Φ1010×1210 mm and with density of 18.7 g/cm3 was prepared, which successfully applied to high-tech fields such as high-purity quartz glass for semiconductor and single crystal sapphire manufacturing; Large-scale rhenium products with purity of 6N and dimension of 0.2×605×720 mm was prepared, which broke through the foreign monopoly of the key components of high-end semiconductor equipment (MOCVD). The two types of products solved the problem that the key parts of national major projects and high-end equipment are subject to other foreign countries. A tungsten products production line with 800 tons/year and a molybdenum plate production line 1200 tons/year have been built. The ultra-high purity tungsten target with purity of 6N2, relative density of 99.74% and average grain size of 14.5 μm was developed; The ultra-high purity tungsten alloy target with purity of 5N3, relative density of 99.66% and average grain size of 8.84 μm was developed; The single crystal silicon product with purity of 11N5 and maximum diameter of φ387 mm was developed; The polycrystalline silicon alloy target with purity of 4N2 and maximum diameter of φ440 mm was developed.